• DocumentCode
    3003192
  • Title

    Carbon nanotubes for interconnect applications

  • Author

    Kreup, F. ; Graham, Andrew P. ; Liebau, Maik ; Duesberg, Georg S. ; Seidel, Robert ; Unger, Eugen

  • Author_Institution
    Infineon Technol. AG, Munich, Germany
  • fYear
    2004
  • fDate
    13-15 Dec. 2004
  • Firstpage
    683
  • Lastpage
    686
  • Abstract
    We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as future interconnects. For the 20 nm node a current density of 5·108 A/cm2 and a resistance of 7.8 kΩ could be achieved for a single multi-walled CNT vertical interconnect.
  • Keywords
    carbon nanotubes; current density; integrated circuit interconnections; lithography; 20 nm; 7.8 kohm; carbon nanotubes; lithographically defined locations; vertical interconnect; Atomic layer deposition; Carbon nanotubes; Conductivity; Contact resistance; Copper; Current density; Electron tubes; Filling; Semiconductivity; Wave functions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-8684-1
  • Type

    conf

  • DOI
    10.1109/IEDM.2004.1419261
  • Filename
    1419261