DocumentCode
3003192
Title
Carbon nanotubes for interconnect applications
Author
Kreup, F. ; Graham, Andrew P. ; Liebau, Maik ; Duesberg, Georg S. ; Seidel, Robert ; Unger, Eugen
Author_Institution
Infineon Technol. AG, Munich, Germany
fYear
2004
fDate
13-15 Dec. 2004
Firstpage
683
Lastpage
686
Abstract
We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as future interconnects. For the 20 nm node a current density of 5·108 A/cm2 and a resistance of 7.8 kΩ could be achieved for a single multi-walled CNT vertical interconnect.
Keywords
carbon nanotubes; current density; integrated circuit interconnections; lithography; 20 nm; 7.8 kohm; carbon nanotubes; lithographically defined locations; vertical interconnect; Atomic layer deposition; Carbon nanotubes; Conductivity; Contact resistance; Copper; Current density; Electron tubes; Filling; Semiconductivity; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN
0-7803-8684-1
Type
conf
DOI
10.1109/IEDM.2004.1419261
Filename
1419261
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