DocumentCode
3003285
Title
Technology, test and application of stack photoresistor colour sensors
Author
Otto, T. ; Ruan, G. ; Fritzsch, U. ; Radehaus, C. ; Gessner, T.
Author_Institution
Dept. of Electrotech. & Informationtech., Univ. of Technol., Chemnitz, Germany
Volume
4
fYear
1997
fDate
9-12 Jun 1997
Firstpage
2757
Abstract
Three kinds of stack arrangement photoresistor colour sensors are developed. The photoresistor are based on an amorphous hydrogenated silicon (a-Si:H) layer. Technology, test results of main performance and some application are given
Keywords
amorphous semiconductors; colour; elemental semiconductors; hydrogen; photodetectors; photoresistors; resistors; silicon; Si:H; amorphous hydrogenated silicon; application; stack photoresistor colour sensor; technology; test; Amorphous materials; Chemical technology; Electromagnetic radiation; Electromagnetic wave absorption; Liquids; Semiconductor diodes; Sensor phenomena and characterization; Silicon; Temperature dependence; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1997. ISCAS '97., Proceedings of 1997 IEEE International Symposium on
Print_ISBN
0-7803-3583-X
Type
conf
DOI
10.1109/ISCAS.1997.612896
Filename
612896
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