Title :
Micro-pixellated flip-chip InGaN and AlInGaN light-emitting diodes
Author :
Griffin, C. ; Zhang, H.X. ; Guilhabert, B. ; Massoubre, D. ; Gu, E. ; Dawson, M.D.
Author_Institution :
Univ. of Strathclyde, Glasgow
Abstract :
Fip-chip GaN-based micro-LED arrays have been fabricated consisting of 256 (16 times 16) micropixels, each of diameter 72 mum. Output characteristics are compared to broad-area reference LED devices fabricated from the same wafers.
Keywords :
III-V semiconductors; aluminium compounds; flip-chip devices; indium compounds; light emitting diodes; optical arrays; AlInGaN; InGaN; flip-chip; light-emitting diodes; micro-LED arrays; size 72 mum; Bonding; Chemicals; Contacts; Gallium nitride; Light emitting diodes; Optical arrays; Optical devices; Optical microscopy; Protection; Silicon;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452512
