Title :
HVPE-grown n-InGaN/p-GaN Single Heterostructure LED With p-side Down
Author :
Reed, M.L. ; Readinger, E.D. ; Sampath, A.V. ; Garrett, G.A. ; Shen, H. ; Wraback, M. ; Syrkin, A. ; Usikov, A. ; Dmitriev, V.A.
Author_Institution :
Sensors & Electron Devices Directorate, Adelphi
Abstract :
An HVPE-grown n-InGaN/p-GaN single heterojunction LED with p-side down and emission at ~ 480nm has been demonstrated. Benefits of the p-down geometry for such an LED associated with polarity are discussed.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; vapour phase epitaxial growth; HVPE growth; InGaN-GaN; hydride vapor phase epitaxy growth; p-down geometry; p-side down; polarity; single heterostructure LED; Chemical technology; Electrons; Heterojunctions; Indium tin oxide; Light emitting diodes; Optical sensors; Performance evaluation; Sea measurements; Spectroscopy; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452513
