DocumentCode
3003552
Title
The Characteristics of a High-Q GaN Micro-cavity Light Emitting Diodes
Author
Kao, Chih-Chiang ; Lu, Tien-Chang ; Kao, Tsung-Ting ; Lin, Li-Fan ; Kuo, Hao-Chung ; Wang, Shing-Chung
Author_Institution
Nat. Chiao Tung Univ., Hsinchu
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We report the characteristics of a GaN high-Q micro-cavity light-emitting diode (MCLED). The GaN MCLED showed a very narrow linewidth of 0.52 nm at 10 mA and a dominant emission peak wavelength at 465.3 nm.
Keywords
III-V semiconductors; gallium compounds; light emitting diodes; microcavities; GaN; dominant emission; high-Q; microcavity light emitting diodes; narrow linewidth; Apertures; Distributed Bragg reflectors; Etching; Gallium nitride; Indium tin oxide; Light emitting diodes; Power generation; Stimulated emission; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4452514
Filename
4452514
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