Title :
Recent advances in III-V nitride electronic devices
Author :
Pavlidis, Dimitris
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The latest developments made using III-V nitride technology for microwave and mm-wave applications are reviewed. Design, processing issues are addressed and device, circuit performance is reported. The devices discussed are AlGaN/GaN-based HEMTs, MISFETs and HBTs. Circuit types reviewed include power and low-noise amplifiers. Nitride technology is also investigated for mixer and switch applications.
Keywords :
III-V semiconductors; MISFET; aluminium compounds; gallium compounds; heterojunction bipolar transistors; high electron mobility transistors; microwave integrated circuits; millimetre wave integrated circuits; power amplifiers; wide band gap semiconductors; AlGaN-GaN; HBT; HEMT; III-V nitride electronic devices; MISFET; low-noise amplifiers; microwave integrated circuits; millimeter wave integrated circuits; mixer; power amplifiers; semiconductor device design; switch; Aluminum gallium nitride; Circuit optimization; HEMTs; III-V semiconductor materials; MISFETs; MODFETs; Microwave devices; Microwave technology; Process design; Switches;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419295
