Title :
A slow-trap model for the kink effect on InAlAs/InP HFET
Author :
Georgescu, B. ; Souifi, A. ; Post, G. ; Guillot, G.
Author_Institution :
Lab. de Phys. de la Matiere, Inst. Nat. des Sci. Appliquees, Villeurbanne, France
Abstract :
The kink effect in InAlAs/InP HFETs was examined in temperature and frequency dependent measurements. A slow states mechanism is found to be probably responsible for the increase of the drain-source conductance related to the kink effect. A deep-level with activation energy of 0.53 eV was deduced from drain conductance dispersion measurements. This level, with a slow emission rate at room temperature, seems to be associated with the kink effect
Keywords :
III-V semiconductors; aluminium compounds; characteristics measurement; deep levels; electric admittance; electron traps; field effect transistors; indium compounds; I-V characteristics; InAlAs-InP; InAlAs/InP HFET; InP; bias-sweep measurements; deep-level; drain conductance dispersion; drain-source conductance; frequency dependent measurements; kink effect; slow states mechanism; slow-trap model; temperature dependent measurements; Frequency; HEMTs; Impact ionization; Indium compounds; Indium phosphide; Leakage current; MODFETs; Optical modulation; Substrates; Temperature distribution;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600082
