Integrated analog switch matrix with large input signal and 46 dB isolation at 1 GHz

Author

Sokolowska, E. ; Belabbes, Nacer ; Kaminska, Bozena

Author_Institution

Ecole Polytech., Montreal Univ., Que., Canada

Volume

4

fYear

1997

fDate

9-12 Jun 1997

Firstpage

2789

Abstract

A complete integrated analog switch matrix allowing a large input signal and amplitude, and demonstrating outstanding performances, namely, a 46 dB feedthrough on channel at 1 GHz and a 9.5 Ω switch resistance in the ON state (R_ON), was developed and fabricated in a standard 1 μm QED/A TriQuint GaAs process. The main advancement of this new concept is that the drive signal opening the switch tracks the input signal with an added positive offset. This constant positive offset results in a very low R_ON, while keeping the switch dimensions and power dissipation acceptably small. This new concept has allowed a monolithic integration of the switches with their drive circuitry and control logic into the 13×13×2 analog switch matrix, which is a unique solution

Keywords

III-V semiconductors; analogue integrated circuits; electronic switching systems; gallium arsenide; semiconductor switches; 1 GHz; 1 micron; GaAs; QED/A TriQuint process; control logic; drive circuitry; feedthrough; input signal amplitude; input tracking switch driver; isolation; monolithically integrated analog switch matrix; on resistance; positive offset; power dissipation; Communication switching; Communication system control; Digital control; Gallium arsenide; Insertion loss; Logic circuits; Protocols; Signal processing; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1997. ISCAS '97., Proceedings of 1997 IEEE International Symposium on

Print_ISBN

0-7803-3583-X

Type

conf

DOI

10.1109/ISCAS.1997.612904

Filename

612904