DocumentCode :
3004403
Title :
Ultrafast Pump-probe Experiment Based on Extremely Broadband Second-harmonic Generation
Author :
Lu, Yen-Cheng ; Wang, Hsiang-Chen ; Chen, Cheng-Yen ; Yang, C.C.
Author_Institution :
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
We use a non-degenerate pump-probe scheme of an extremely broad probe spectrum to monitor the ultrafast carrier relaxation process from the excitation levels down to the free-carrier and the localized states in an InGaN thin-film.
Keywords :
III-V semiconductors; gallium compounds; high-speed optical techniques; indium compounds; localised states; optical harmonic generation; optical pumping; semiconductor thin films; InGaN; broad probe spectrum; excitation levels; extremely broadband second-harmonic generation; free-carrier; localized states; nondegenerate pump-probe scheme; ultrafast carrier relaxation process; ultrafast pump-probe experiment; Delay effects; Dispersion; Energy states; Fluctuations; Gallium nitride; Indium; Optical films; Probes; Transistors; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/CLEO.2007.4452566
Filename :
4452566
Link To Document :
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