Title :
Comprehensive study of soft errors in advanced CMOS circuits with 90/130 nm technology
Author :
Tosaka, Y. ; Ehara, H. ; Igeta, M. ; Uemura, T. ; Oka, H. ; Matsuoka, N. ; Hatanaka, K.
Author_Institution :
Fujitsu Labs. Ltd., Tokyo, Japan
Abstract :
Characteristics of soft errors (SEs) in 90/130 nm CMOS circuits were comprehensively investigated by high energy neutron- and alpha-accelerated tests. Process dependence on SEs in latch circuits due to neutrons and alpha-ray were investigated. Error patterns in multiple-bit SEs in SRAMs and their impacts on ECC design were also discussed.
Keywords :
CMOS integrated circuits; SRAM chips; integrated circuit design; integrated circuit testing; 130 nm; 90 nm; CMOS circuits; ECC design; SRAM; alpha ray; alpha-accelerated test; error patterns; latch circuits; neutron-accelerated test; process dependence; soft errors; Atmospheric measurements; Atmospheric modeling; CMOS technology; Circuit testing; Error correction codes; Latches; Neutrons; Nuclear physics; Particle beams; Random access memory;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419339
