Abstract :
Summary form only given, as follows. The session opens with an invited paper from Cea, et al., which describes how various process steps generate tensile and compressive stress, and analyzes the impact on carrier transport. Modeling of shallow boron junctions remains a stringent test of any dopant model framework. Pichler, et al., describe a comprehensive framework for modeling shallow boron junctions in their invited paper. Colombeau, et al., explain the influence of preamorphization and fluorine on activation and diffusion of boron. Hane, et al., investigate millisecond annealing using atomistic models of boron diffusion. Interfaces are another important theme, with segregation of phosphorus and boron at Si-Si02 interfaces being explored by Tsai et al., and Ghetti, et al., respectively.
