Title :
N-rich and dilute-nitride GaNx(AsSb)1-x on InP substrates
Author :
Mawst, L.J. ; Xu, D.P. ; Huang, J.Y.T. ; Park, J.H. ; Rathi, M.K. ; Kuech, T.F.
Author_Institution :
Univ. of Wisconsin-Madison, Madison
Abstract :
GaAsNSb alloys have been demonstrated using MOCVD growth over a wide span of nitrogen composition. Dilute-nitride alloys hold potential for mid-IR emission using GaAsSbN/GaAsSb type-II QWs.
Keywords :
III-V semiconductors; MOCVD coatings; dilute alloys; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; InGaAsN(Sb); MOCVD growth; dilute-nitride alloys; mid-IR emission; nitrogen composition; quantum well lasers; semiconductor lasers; Capacitive sensors; Gallium arsenide; Gallium nitride; Indium phosphide; Lasers and Electro-Optics Society; MOCVD; Nitrogen; Optical materials; Temperature; Tensile strain;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452601
