Title :
InAs/GaAs Quantum Dot Saturable Absorber Mirror for Passive Mode-Locking of Nd:YVO4 Lasers at 1064 nm
Author :
Scurtescu, C. ; Zhang, Z.Y. ; Alcock, A.J. ; Fedosejevs, R. ; Blumin, M. ; Saveliev, I. ; Yang, S. ; Ruda, H.E. ; Tsui, Y.Y.
Author_Institution :
Univ. of Alberta, Edmonton
Abstract :
An InAs/GaAs quantum dot saturable absorber mirror was developed to passively mode-lock a Nd:YVO4 laser at the wavelength of 1064.6 nm. CW mode-locked pulses of 24ps duration at a repetition rate of 65 MHz were obtained.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; mirrors; neodymium; optical saturable absorption; semiconductor quantum dots; yttrium compounds; CW mode-locked pulses; InAs-GaAs; Nd:YVO4 lasers; YVO4:Nd; frequency 65 MHz; passive mode-locking; quantum dot saturable absorber mirror; time 24 ps; wavelength 1064.6 nm; Absorption; Chemical lasers; Distributed Bragg reflectors; Gallium arsenide; Laser mode locking; Mirrors; Pulsed laser deposition; Quantum dot lasers; Quantum dots; Reflectivity;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452604