Title :
Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: interstitial transport and F co-implant control
Author :
Colombeau, B. ; Smith, A.J. ; Cowern, N.E.B. ; Lerch, W. ; Paul, S. ; Pawlak, B.J. ; Cristiano, F. ; Hebras, X. ; Bolze, D. ; Ortiz, C. ; Pichler, P.
Author_Institution :
Adv. Technol. Inst., Surrey Univ., Guildford, UK
Abstract :
This work presents breakthrough results on the physics and modeling of deactivation and transient enhanced diffusion of boron in preamorphized (PAI) ultrashallow junctions, and the mechanisms by which fluorine co-implantation controls these processes. The results provide a much-needed general physical framework for the evaluation of novel equipment and thermal processes beyond the 50 nm technology node.
Keywords :
amorphisation; boron; diffusion; fluorine; interstitials; ion implantation; nanotechnology; thermal properties; B; F; F coimplant control; boron diffusion; electrical deactivation; equipment evaluation; fluorine coimplantation; interstitial transport; nanometer technology; preamorphized ultrashallow junction; thermal processes; Annealing; Boron; Computational modeling; Implants; Physics computing; Predictive models; Process control; Shape; Silicon; Surface treatment;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419348
