Title :
Comparison of electromigration phenomenon between aluminum interconnection of various multilayered materials
Author :
Fujii, T. ; Okuyama, K. ; Moribe, S. ; Torii, Y. ; Katto, H. ; Agatsuma, T.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
The electromigration characteristics of a multilayered system were found to be divided into three stages. The mechanism leading to the stages is discussed in terms of the process of microvoid growth during the electromigration stressing and is correlated with the amount of Si precipitation and the size of the grain boundary of Al films, the reaction layer at the interface, and the resistivity of the barrier metal. The experiments were carried out for MoSi, TiN, and TiW film deposited on oxidized Si (100) wafers by sputtering
Keywords :
aluminium; cracks; electromigration; grain boundaries; metallisation; (100) oxidised wafers; Al alloy films; AlCuSi-TiN; MoSi-AlCuSi-MoSi; Si precipitation; Si wafers; TiW-AlCuSi-TiW; electromigration; grain boundary size; metallisation; microvoid growth; multilayered materials; Aluminum; Conductivity; Electromigration; Grain boundaries; Inorganic materials; Materials testing; Passivation; Plasma applications; Stress; Tin;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1989.78040
