Title :
DC, small-signal, and noise characteristics of 0.1 μm AlSb/InAs HEMTs
Author :
Boos, J.B. ; Kruppa, W. ; Park, D. ; Bennett, B.R. ; Bass, R.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
We report on the dc and small-signal characteristics of 0.1 μm AlSb/InAs HEMTs. These recessed-gate devices have an In0.4Al 0.6As/AlSb composite barrier above the InAs quantum well and a p+ GaSb layer within the AlSb buffer layer. The devices exhibit a transconductance of 600 mS/mm and an fT of 120 GHz at VDS=0.6 V. An intrinsic fT of 150 GHz is obtained after removal of the gate bonding pad capacitance. 0.5 μm HEMTs on the same wafer exhibit a transconductance of 1 S/mm and an intrinsic fTLg product of 50 GHz-μm. At 4 GHz, the 0.1 μm HEMTs have a minimum noise figure of 1 dB with 14 dB associated gain at VDS=0.4 V
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; semiconductor device noise; 0.1 micron; 0.4 to 0.6 V; 1 dB; 14 dB; 4 to 150 GHz; AlSb-InAs; AlSb/InAs HEMT; DC characteristics; buffer layer; composite barrier; cutoff frequency; gain; gate bonding pad capacitance; noise figure; p+ GaSb layer; quantum well; recessed-gate device; small-signal characteristics; transconductance; Buffer layers; Electron mobility; Fabrication; Gallium arsenide; HEMTs; Heterojunctions; Impact ionization; Indium compounds; MODFETs; Sheet materials;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600089
