Title :
Efficiency of Pulsed Terahertz Generation from the Surface of A3B5 Semiconductors
Author :
Antsygin, V.D. ; Nikolaev, N.A. ; Mamrashev, A.A. ; Potaturkin, O.I.
Author_Institution :
Lab. of Informational Opt., Inst. of Autom. & Electrometry, Novosibirsk, Russia
Abstract :
The development of wideband terahertz spectrometers based on femtosecond fiber laser is reported. Experimental investigation is carried out into the efficiency of conversion from laser to terahertz radiation in InSb, InAs, and GaAs semiconductors. The mechanisms of generation of pulsed terahertz radiation from the surface of semiconductors at 1550 nm and 775 nm pump wavelengths are discussed.
Keywords :
III-V semiconductors; fibre lasers; gallium arsenide; high-speed optical techniques; indium compounds; optical pumping; semiconductor lasers; terahertz wave generation; GaAs; GaAs semiconductors; InAs; InAs semiconductors; InSb; InSb semiconductors; femtosecond fiber laser; pulsed terahertz generation; pulsed terahertz radiation generation; pump wavelengths; semiconductor surface; wavelength 1550 nm; wavelength 775 nm; wideband terahertz spectrometers; Gallium arsenide; Laser excitation; Magnetic fields; Optical surface waves; Pump lasers; Semiconductor lasers; Ultrafast optics;
Conference_Titel :
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-0909-8
DOI :
10.1109/SOPO.2012.6271070
