Title :
Silicon-Germanium p-i-n Photodetectors at Telecommunication Wavelengths Grown Directly on Silicon
Author :
Ali, Dyan ; Thompson, Phillip ; Goldhar, Julius ; DiPasquale, Joseph, III ; Richardson, Christopher J.K.
Author_Institution :
Univ. of Maryland, College Park
Abstract :
We report on Si-rich Si1-xGex p-i-n waveguide detectors with responsivities greater than 0.74 A/W at 1.3 mum and 20 K. We present two photodetector designs for 1.3 mum detection on silicon without virtual buffer relaxation layers.
Keywords :
Ge-Si alloys; optical communication equipment; optical waveguides; p-i-n photodiodes; photodetectors; silicon; SiGe-Si; W-structure design; dark currents; electrically active defects; p-i-n waveguide detectors; silicon-germanium p-i-n photodetectors; telecommunication wavelengths; temperature 20 K; wavelength 1.3 mum; Buffer layers; Dark current; Detectors; Germanium silicon alloys; Optical buffering; Optical films; Optical waveguides; PIN photodiodes; Photodetectors; Silicon germanium;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452665
