Recent Development of IV-VI Mid-Infrared Photonic Crystal Laser on Silicon

We present our group´s recent research progresses of mid-infrared (mid-IR) surface emitting two-dimensional (2D) photonic crystal (PC) lasers via MBE-grown IV-VI group semiconductors on silicon substrates. The device design was based on a 2D micron-level honeycomb structure, in which complete photonic bandgaps will form in mid-IR region. For the initial demonstration, two intensive PC modulated mid-IR light emissions were identified under cryogenic temperature range. After theoretical modification, room temperature surface emitting PC coupled mid-IR lasing was observed recently. With further optimization, room temperature surface emitting continuous wave PC laser is envisioned in the near future.