Title :
Area selective gold MOCVD for VLSI electronics
Author :
Colgate, Samuel O. ; Palenik, Gus J. ; House, V.Evan ; Schoenfeld, Dean W. ; Simon, Charles G.
Author_Institution :
Dept. of Chem., Florida Univ., Gainesville, FL, USA
Abstract :
Summary form only given. Area-selective metal-organic chemical vapor deposition (MOCVD) of gold thin films has been achieved on tungsten patterned on VLSI-type silicon wafers. Scanning Auger spectroscopy of the wafer deposition areas displays virtual exclusion of gold deposits on silicious regions with 4000-Å-thick gold films of high feature resolution covering the tungsten patterns. The films were deposited by exposing the heated wafer (T<500°C) to an ambient of (C2H5)3PAuCl vapor for 1 h
Keywords :
Auger effect; CVD coatings; VLSI; gold; metallisation; Au-W-Si; VLSI; area-selective MOCVD; feature resolution; heated wafer; metal-organic chemical vapor deposition; scanning Auger spectroscopy; virtual exclusion; Chemical vapor deposition; Displays; Gold; MOCVD; Semiconductor thin films; Silicon; Spectroscopy; Sputtering; Tungsten; Very large scale integration;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1989.78052
