Title :
Simulation and Experimental Results of a 0.15µm Independent Double Gated CMOS Transistor
Author :
Vasireddy, V. ; Parke, S.
Author_Institution :
Tennessee Tech Univ., Cookeville, TN, USA
fDate :
June 28 2010-July 1 2010
Abstract :
Independent double gated transistors give better control of the channel and dynamic tradeoff between power and performance. An independent double gated (IDG) FlexFET transistor is simulated using the Silvaco Atlas tool and the results are then compared with the data obtained from experimental devices manufactured by American Semiconductor Inc. (ASI). A reasonable correlation between the simulations and the experimental devices is obtained, following careful calibration of the simulation parameters. The bottom gate control factor (f) (i.e. the ratio of the change in threshold voltage to the change in bottom gate voltage) is observed to be around 0.3. The simulator is calibrated to match the experimental results by changing several parameters.
Keywords :
CMOS integrated circuits; MOSFET; calibration; semiconductor device models; Silvaco Atlas tool; bottom gate control factor; independent double gated CMOS transistor; independent double gated FlexFET transistor; simulator calibration; size 0.15 mum; Calibration; Energy consumption; MOS devices; MOSFET circuits; Semiconductor device manufacture; Silicon; Threshold voltage; Transistors; Virtual manufacturing; Voltage control;
Conference_Titel :
Micro/Nano Symposium (UGIM), 2010 18th Biennial University/Government/Industry
Conference_Location :
West Lafayette, IN
Print_ISBN :
978-1-4244-4731-2
Electronic_ISBN :
0749-6877
DOI :
10.1109/UGIM.2010.5508928
