D-band MMIC LNAs with 12 dB gain at 155 GHz fabricated on a high yield InP HEMT MMIC production process

Author

Lai, R. ; Wang, H. ; Chen, Y.C. ; Block, T. ; Liu, P.H. ; Streit, D.C. ; Tran, D. ; Siegel, P. ; Barsky, M. ; Jones, W. ; Gaier, T.

Author_Institution

Electron. Space & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1997

fDate

11-15 May 1997

Firstpage

241

Lastpage

244

Abstract

We have developed a highly robust, high performance 0.1 μm passivated InP HEMT MMIC process with frequency capability up to 200 GHz and beyond. This process has demonstrated consistent wafer to wafer performance as well as remarkable uniformity with a wafer average Gmp of 1100 mS/mm ±44 mS for more than 1000 sites tested over a 2 inch diameter wafer. We report a D-band InP HEMT MMIC LNA using this process which has demonstrated 12 dB gain at 155 GHz. This represents the highest frequency solid-state amplifier ever reported to date

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MMIC; indium compounds; integrated circuit technology; integrated circuit yield; millimetre wave amplifiers; 0.1 micron; 12 dB; 155 GHz; 2 inch; D-band MMIC LNA; InP; fabrication; gain; passivated InP HEMT; solid-state amplifier; yield; Cutoff frequency; Gain; HEMTs; Indium gallium arsenide; Indium phosphide; MMICs; Molecular beam epitaxial growth; Production; Silicon; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600109

Filename

600109