Title :
InGaAs photoconductive antennas for THz emission and detection with 1.56 μm excitation
Author :
Takazato, A. ; Matsui, T. ; Kitagawa, J. ; Kadoya, Y.
Author_Institution :
Hiroshima Univ., Higashihiroshima
Abstract :
The performance of photoconductive antennas made on low-temperature-grown InGaAs was significantly improved by the reduction of the In content. We demonstrate a completely 1.56 μm-based THz-emission and detection using the PC antennas.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoconducting devices; semiconductor growth; submillimetre wave antennas; submillimetre wave detectors; submillimetre wave generation; InGaAs; THz detection; THz emission; low-temperature growth; photoconductive antennas; wavelength 1.56 μm; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Laser excitation; Optical materials; Optical pulses; Photoconducting materials; Photoconductivity; Photonic band gap; Substrates;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452855
