DocumentCode :
3009892
Title :
Technological and design limitations of bipolar power transistors
Author :
Strakos, Vladimír
Author_Institution :
Corp. R&D, ONSemiconductor, Roznov, Czech Republic
fYear :
2009
fDate :
13-17 May 2009
Firstpage :
1
Lastpage :
3
Abstract :
The clarification of effects having negative impact on power transistor performance. The review of demands on parameters of modern bipolar power transistors and main limitations both technological and design are given. Some concepts are proposed for solving of these problems.
Keywords :
power bipolar transistors; bipolar power transistors; design limitations; transistor negative impact; Power transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Technology, 2009. ISSE 2009. 32nd International Spring Seminar on
Conference_Location :
Brno
Print_ISBN :
978-1-4244-4260-7
Type :
conf
DOI :
10.1109/ISSE.2009.5206928
Filename :
5206928
Link To Document :
بازگشت