Title :
Ka-band monolithic GaAs FET power amplifier modules
Author :
Camilleri, N. ; Kim, B. ; Tserng, H.Q. ; Shih, H.D.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Monolithic GaAs FET power amplifiers consisting of several power-combined devices are fabricated and evaluated. The baseline monolithic chip design consists of a single stage 400- mu m FET amplifier and a six-way traveling-wave power divider/combiner with a single-stage amplifier in each of the six arms. Several chip combinations were used to make a 1-W amplifier with 5-dB gain and a 0.55-W amplifier with 27-dB gain at 34 GHz. A two-way hybrid combining scheme making use of 0.6-W monolithic chips producing 1 W of output power is also described.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; microwave amplifiers; microwave integrated circuits; modules; power amplifiers; waveguide components; 0.55 W; 1 W; 27 dB; 34 GHz; 5 dB; FET amplifier; GaAs; Ka-band monolithic FT power amplifier modules; monolithic chip design; power-combined devices; six-way traveling-wave power divider/combiner; two-way hybrid combining scheme; Chip scale packaging; Equivalent circuits; FETs; Gallium arsenide; Inductors; Instruments; Laboratories; MIM capacitors; Performance gain; Power amplifiers;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988
Conference_Location :
New York, NY, USA
DOI :
10.1109/MCS.1988.197306
