DocumentCode
3010889
Title
The relaxation processes analysis in the submicron heterojunction transistor with quantum dots
Author
Timofeyev, Vladimir ; Faleeva, Elena
Author_Institution
Dept. of Phys. & Biomed. Electron., Nat. Tech. Univ. of Ukraine "Kiev Polytech. Inst.", Kiev, Ukraine
fYear
2009
fDate
13-17 May 2009
Firstpage
1
Lastpage
4
Abstract
In the paper an algorithm for heterostructure transistor with quantum dots modeling is presented. The described model is based on the system of relaxation equations which takes into account relaxation processes in multivalley semiconductors, and to describe submicron structures sufficiently.
Keywords
high electron mobility transistors; quantum dots; quantum dots; relaxation processes; submicron heterojunction transistor; submicron structures; Biomedical electronics; Charge carriers; Electrons; Energy conservation; Heterojunctions; Poisson equations; Quantum dot lasers; Quantum dots; Temperature distribution; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Technology, 2009. ISSE 2009. 32nd International Spring Seminar on
Conference_Location
Brno
Print_ISBN
978-1-4244-4260-7
Type
conf
DOI
10.1109/ISSE.2009.5206982
Filename
5206982
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