DocumentCode :
3011472
Title :
Temperature dependence of dark current features of CdTe thin-film solar cells
Author :
Werner, Barbara ; Kolodenny, Wlodzimierz ; Dziedzic, Andrzej
Author_Institution :
Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Wroclaw, Poland
fYear :
2009
fDate :
13-17 May 2009
Firstpage :
1
Lastpage :
3
Abstract :
In the paper results of investigating the characteristic features of temperature dependence of electrical parameters in dark I-V measurements for CdTe thin-film PV (photovoltaic) modules are presented. The purpose of originating the second junction in this kind of PV modules is shown. The electrical behaviour of II-(III)-VI thin-film PV cells/modules is influenced mainly by the defect layers located at the buffer/absorber interface and in the bulk of depletion region as well as due to manufacturing process. Results presented in this paper were determined from fitting the large amount of data acquired in natural outdoor conditions during long term monitoring [1].
Keywords :
II-VI semiconductors; cadmium compounds; semiconductor thin films; solar cells; CdTe; buffer/absorber interface; dark current; electrical parameters; thin-film PV cells/modules; thin-film solar cells; Condition monitoring; Dark current; Electric variables measurement; Fitting; Manufacturing processes; Photovoltaic cells; Photovoltaic systems; Solar power generation; Temperature dependence; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Technology, 2009. ISSE 2009. 32nd International Spring Seminar on
Conference_Location :
Brno
Print_ISBN :
978-1-4244-4260-7
Type :
conf
DOI :
10.1109/ISSE.2009.5207011
Filename :
5207011
Link To Document :
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