DocumentCode
3012173
Title
Enhancement of Light Extraction in GaInN Light-Emitting Diodes with Graded-Index Indium Tin Oxide Layer
Author
Kim, Jong Kyu ; Schubert, Martin F. ; Xi, J.-Q. ; Mont, Frank ; Schubert, E.Fred
Author_Institution
Rensselaer Polytech. Inst., Troy
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
Enhancement of light extraction in a GaInN light-emitting diode employing a graded-refractive index ITO anti-reflection coating deposited by oblique-angle electron-beam evaporation is presented.
Keywords
III-V semiconductors; antireflection coatings; electron beam deposition; gallium compounds; gradient index optics; indium compounds; light emitting diodes; refractive index; vacuum deposition; GaInN; ITO; antireflection coating; graded-refractive index indium tin oxide layer; light extraction enhancement; light-emitting diodes; oblique-angle electron-beam evaporation; Coatings; Gallium nitride; Indium tin oxide; Light emitting diodes; Optical films; Optical refraction; Optical variables control; Physics; Reflectivity; Refractive index;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453003
Filename
4453003
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