• DocumentCode
    3013544
  • Title

    Relaxation of upper laser levels in terahertz silicon lasers

  • Author

    Pavlov, Sergey G. ; Hübers, Heinz-Wilhelm ; Zhukavin, Roman Kh ; Phillips, P.Jonathan ; Carder, Damian A. ; Hovenier, J. Niels ; Klaassen, Tjeerd O. ; Shastin, Valery N.

  • Author_Institution
    Inst. of Planetary Res., German Aerosp. Center, Berlin
  • fYear
    2008
  • fDate
    17-19 Sept. 2008
  • Firstpage
    27
  • Lastpage
    28
  • Abstract
    Relaxation of lower exited states of group-V donors in silicon which serve as upper working states of intracenter silicon lasers has been experimentally determined. The measurements show that decay times of 2p0 and 2pplusmn states lie in the range of 4-90 ps.
  • Keywords
    elemental semiconductors; excited states; semiconductor lasers; silicon; submillimetre wave lasers; Si; decay times; exited states; group-V donors; intracenter silicon laser; terahertz silicon laser; upper laser level relaxation; Absorption; Free electron lasers; Laser excitation; Laser theory; Laser transitions; Physics; Probes; Pump lasers; Quantum cascade lasers; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2008 5th IEEE International Conference on
  • Conference_Location
    Cardiff
  • Print_ISBN
    978-1-4244-1769-8
  • Electronic_ISBN
    978-1-4244-1768-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2008.4638085
  • Filename
    4638085
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3013544