• DocumentCode
    3014153
  • Title

    Electro-luminescence from un-doped and doped nanocrystalline Si/SiO2 multilayers

  • Author

    Wei, D.Y. ; Wang, T. ; Sun, H.C. ; Liu, Y. ; Chen, D.Y. ; Xu, J. ; Ma, Z.Y. ; Chen, K.J.

  • Author_Institution
    Dept. of Phys., Nanjing Univ., Nanjing
  • fYear
    2008
  • fDate
    17-19 Sept. 2008
  • Firstpage
    125
  • Lastpage
    127
  • Abstract
    Electroluminescence devices based on nanocrystalline Si/SiO2 multilayers were fabricated and the luminescence can be observed both from vertical and lateral direction. Moreover, P-doped nanocrystalline Si/SiO2 multilayers were prepared and the improved electro-luminescence characteristics were achieved.
  • Keywords
    electroluminescent devices; elemental semiconductors; multilayers; nanostructured materials; silicon; silicon compounds; Si-SiO2; electroluminescence; nanocrystalline Si/SiO2 multilayers; Integrated circuit technology; Luminescence; Nanoscale devices; Nonhomogeneous media; Photonic integrated circuits; Plasma temperature; Rapid thermal annealing; Semiconductor films; Size control; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2008 5th IEEE International Conference on
  • Conference_Location
    Cardiff
  • Print_ISBN
    978-1-4244-1769-8
  • Electronic_ISBN
    978-1-4244-1768-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2008.4638119
  • Filename
    4638119
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3014153