DocumentCode
3014483
Title
Reducing the free-carrier lifetime in silicon waveguides by controlled Au doping
Author
Gajda, Andrzej ; Müller, Jost ; Nobis, Olaf ; Bruns, Jürgen ; Giuntoni, Ivano ; Krause, Michael ; Renner, Hagen ; Petermann, Klaus ; Brinkmeyer, Ernst
Author_Institution
Tech. Univ. Berlin, Berlin
fYear
2008
fDate
17-19 Sept. 2008
Firstpage
173
Lastpage
175
Abstract
We show a reduction of the free-carrier lifetime in silicon-on-insulator waveguides as a result of gold doping. Linear losses as well as temporal recombination processes have been measured at different doping levels.
Keywords
Raman spectra; carrier lifetime; doping profiles; elemental semiconductors; gold; integrated optics; optical losses; optical waveguides; silicon; silicon-on-insulator; Raman scattering; Si:Au; doping levels; free-carrier lifetime; gold doping; linear losses; linear waveguide attenuation; silicon-on-insulator waveguides; temporal recombination processes; Absorption; Charge carrier lifetime; Doping; Gold; Loss measurement; Optical amplifiers; Optical waveguides; Silicon on insulator technology; Stimulated emission; Waveguide junctions;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location
Cardiff
Print_ISBN
978-1-4244-1769-8
Electronic_ISBN
978-1-4244-1768-1
Type
conf
DOI
10.1109/GROUP4.2008.4638135
Filename
4638135
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