• DocumentCode
    3014577
  • Title

    35 GHz Ge p-i-n photodetectors implemented using RPCVD

  • Author

    Suh, Dongwoo ; Kim, Sanghoon ; Joo, Jiho ; Kim, Gyungock ; Kim, In Gyoo

  • Author_Institution
    Electron. & Telecommun. Res. Inst., Daejeon
  • fYear
    2008
  • fDate
    17-19 Sept. 2008
  • Firstpage
    191
  • Lastpage
    193
  • Abstract
    Vertical Ge photodetectors were fabricated on silicon using RPCVD showing bandwidth of 35 GHz at -3 V, dark current of 30 nA, and responsivity of 0.47 A/W for 20 mum-diameter detectors.
  • Keywords
    chemical vapour deposition; elemental semiconductors; germanium; photodetectors; Ge; RPCVD; dark current; frequency 35 GHz; p-i-n photodetectors; responsivity; Bandwidth; Detectors; Lattices; Optical waveguides; PIN photodiodes; Photodetectors; Silicon; Substrates; Telecommunications; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2008 5th IEEE International Conference on
  • Conference_Location
    Cardiff
  • Print_ISBN
    978-1-4244-1769-8
  • Electronic_ISBN
    978-1-4244-1768-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2008.4638141
  • Filename
    4638141
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3014577