DocumentCode :
3014896
Title :
Local infiltration of individual pores with dyes in 2D macroporous silicon photonic crystals
Author :
Nolte, Peter ; Pergande, Daniel ; Schweizer, Stefan L. ; Wehrspohn, Ralf B. ; Geuss, Markus ; Steinhart, Martin ; Salzer, Roland
Author_Institution :
Halle-Wittenberg Inst. of Phys., Martin-Luther-Univ., Halle
fYear :
2008
fDate :
17-19 Sept. 2008
Firstpage :
234
Lastpage :
236
Abstract :
Photonic crystals (PhC) are promising candidates for novel optical components. Passive devices realized with PhC, e.g. complex waveguides, are widely known. However for many applications active devices are required. One possible way to realize such devices is the functionalization of 2D PhC. This can be done by combining 2D PhC with dyes. We present an experimental technique for the infiltration of individual pores which allows the realization of a broad spectrum of different device designs. For the infiltration of individual pores we use 2D PhC templates made of macroporous silicon, electron beam physical vapor deposition, focused ion beam technique, electrochemical deposition and the wetting assisted templating (WASTE)-process [1]-[3].
Keywords :
dyes; electron beam deposition; elemental semiconductors; focused ion beam technology; optical design techniques; optical fabrication; optical materials; photonic crystals; porous semiconductors; silicon; wetting; 2D macroporous silicon photonic crystals; Si; active device; complex waveguides; device design; dyes; electrochemical deposition; electron beam physical vapor deposition; focused ion beam technique; local infiltration; optical components; passive device; wetting assisted templating process; Chemical vapor deposition; Crystalline materials; Electron beams; Gold; Ion beams; Optical devices; Optical materials; Photonic crystals; Physics; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff, Wales
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
Type :
conf
DOI :
10.1109/GROUP4.2008.4638156
Filename :
4638156
Link To Document :
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