Title :
GaInP/GaAs monolithic tandem concentrator cells
Author :
Friedman, D.J. ; Kurtz, Sarah R. ; Bertness, K.A. ; Kibbler, A.E. ; Kramer, C. ; Olson, J.M. ; King, D.L. ; Hansen, B.R. ; Snyder, J.K.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
This paper discusses design considerations for the GaInP/GaAs monolithic tandem concentrator cell. The prototype device achieves a peak efficiency of 30.2% in a range of 140-180 suns, making this the first two-terminal device to demonstrate a verified efficiency exceeding 30%. At 425 suns the efficiency is still above 29%. We focus on the issues of grid design, top-cell thickness, and antireflectance coat. We also examine ways in which these aspects of the device may be modified to provide further performance improvements for future devices
Keywords :
III-V semiconductors; antireflection coatings; gallium arsenide; indium compounds; optical films; solar cells; solar energy concentrators; 140-180 suns; 30.2 percent; 425 suns efficiency; GaInP-GaAs; GaInP/GaAs monolithic tandem concentrator cells; antireflectance coat; grid design; peak efficiency; performance improvements; top-cell thickness; two-terminal device; Conductivity; Etching; Fabrication; Fingers; Gallium arsenide; Gold; Metallization; Substrates; Sun; Surface resistance;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520721
