DocumentCode :
3015011
Title :
Nanosolenoid inductor for high frequency application
Author :
Wang, Z.Q. ; Mao, Y.F. ; Zhao, L.R. ; Wu, W.G. ; Xu, Jie
Author_Institution :
Nat. Key Lab. of Micro/Nano Fabrication Technol., Peking Univ., Beijing, China
fYear :
2013
fDate :
5-8 Aug. 2013
Firstpage :
501
Lastpage :
504
Abstract :
This paper reports the fabrication, measurement and discussion about the nanosolenoid inductors for high frequency applications as much as 40 GHz, taking advantage of a much smaller size compared with traditional microinductors. Three small size nanosolenoid inductors are fabricated, such as a nanosolenoid inductor with a diameter of 4.8 μm, pitch of 10 μm, length of 22 μm. The nanohelix inductors are fabricated using focused ion beam stress introducing technology based on nanobeams, which are obtained by etching the aluminum deposited on SOI substrate. With different focused ion beam fabrication conditions, such as implementing does, etching number, we get different sets of nanosolenoid inductors with different pitches, diameters and solenoid turns. The inductor and quality factor of the nanohelix inductor vary with frequency. The inductanc decrease from 9 pH to an inductance smaller than 1 pH, when the frequency changes from 100 MHz to 40 GHz. And the quality factor of the nanosolenoid inductor first arises from 0.1 at 100 MHz to 0.3 at about 2 GHz, then the quality factor slightly decreases, at last it will arise to about 1.4 at 40 GHz.
Keywords :
aluminium; focused ion beam technology; inductors; nanofabrication; silicon-on-insulator; solenoids; sputter etching; Al; etching process; focused ion beam fabrication; focused ion beam stress introducing technology; frequency 100 MHz to 40 GHz; high frequency application; nanobeam; nanohelix inductor; nanosolenoid inductor; size 10 mum; size 22 mum; size 4.8 mum; Aluminum; Etching; Fabrication; Inductance; Inductors; Q-factor; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
Conference_Location :
Beijing
ISSN :
1944-9399
Print_ISBN :
978-1-4799-0675-8
Type :
conf
DOI :
10.1109/NANO.2013.6720836
Filename :
6720836
Link To Document :
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