DocumentCode
3015149
Title
Sputtered Ge-Si heteroepitaxial thin films for photodetection in third window
Author
Feré, Massimo ; Lanata, Marta ; Piccinin, Davide ; Pietralunga, Silvia M. ; Zappettini, Andrea ; Ossi, Paolo M. ; Martinelli, Mario
Author_Institution
CoreCom, Milan
fYear
2008
fDate
17-19 Sept. 2008
Firstpage
270
Lastpage
272
Abstract
DC-pulsed magnetron sputtering (PMS) allows to produce heteroepitaxial p-type Germanium thin films on 6rdquo Silicon wafers. Integrated p-n photodiodes, based on DC-PMS deposited Ge/Si heterojunctions, feature flat responsivity over the whole third communication window.
Keywords
Ge-Si alloys; p-n heterojunctions; photodetectors; semiconductor epitaxial layers; semiconductor heterojunctions; sputter deposition; DC-pulsed magnetron sputtering; SiGe; p-n photodiodes; photodetection; sputtered heteroepitaxial thin films; Amorphous magnetic materials; Amorphous materials; Germanium; Optical films; Photodiodes; Rough surfaces; Semiconductor thin films; Sputtering; Surface cleaning; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location
Cardiff, Wales
Print_ISBN
978-1-4244-1769-8
Electronic_ISBN
978-1-4244-1768-1
Type
conf
DOI
10.1109/GROUP4.2008.4638169
Filename
4638169
Link To Document