Title :
Studies on stacking faults and crystalline defects in fabrication silicon wafer substrate
Author :
Hua, Y.N. ; Lim, S.L. ; An, L.H. ; Guo, Z.R. ; Fan, Y.K.
Author_Institution :
Chartered Semicond. Manuf. Ltd., Singapore
Abstract :
Silicon crystalline defects in production silicon wafers affect the yield. In this paper, the 155 Wright etch was used to identify the root causes of silicon crystalline defects. A few low yield cases are studied and the different types of crystalline defects and their possible root causes and preventative measures taken are discussed
Keywords :
crystal defects; elemental semiconductors; etching; integrated circuit technology; integrated circuit yield; silicon; stacking faults; Si; Wright etch; crystalline defect root causes; crystalline defects; production silicon wafers; silicon crystalline defects; silicon wafer yield; silicon wafers; stacking faults; Chemicals; Crystallization; Etching; Fabrication; Failure analysis; Hafnium; Scanning electron microscopy; Silicon; Stacking; Substrates;
Conference_Titel :
Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on
Conference_Location :
Bangi
Print_ISBN :
0-7803-4971-7
DOI :
10.1109/SMELEC.1998.781139
