DocumentCode
3015263
Title
Monolithic 1.55-μm GaInNAsSb Quantum Well Mode-Locked Lasers
Author
Xin, Y.C. ; Lester, L.F. ; Bank, S.R. ; Bae, H.P. ; Yuen, H.B. ; Wistey, M.A. ; Harris, J.S.
Author_Institution
Univ. of New Mexico, Albuquerque
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
The first monolithic GaInNAsSb/GaNAs 1550-nm mode-locked lasers are reported on a GaAs substrate. A repetition rate of 5.8 GHz has been realized.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser mode locking; quantum well lasers; ridge waveguides; GaAs; GaInNAsSb; monolithic mode-locked lasers; passively mode-locked devices; quantum well mode-locked lasers; ridge waveguides; semiconductor lasers; wavelength 1.55 mum; Gallium arsenide; Laser mode locking; Optical interconnections; Optical materials; Optical pulse generation; Optical pumping; Quantum well lasers; Semiconductor lasers; Waveguide lasers; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453175
Filename
4453175
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