DocumentCode
3015331
Title
Quantum Interference Control of Electrical Currents in Silicon
Author
Costa, L. ; Spasenovic, M. ; Betz, M. ; Bristow, A.D. ; van Driel, H.M.
Author_Institution
Univ. of Toronto & Inst. for Opt. Sci., Toronto
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
Electrical currents are generated in clean silicon at T = 300 K using quantum interference of femtosecond fundamental and second-harmonic pulses. This efficient photoinjection of ballistic currents across the indirect bandgap is detected by the emitted terahertz radiation.
Keywords
ballistic transport; electro-optical effects; elemental semiconductors; optical harmonic generation; quantum interference phenomena; silicon; Si; ballistic currents; clean silicon; electrical currents; femtosecond pulses; indirect bandgap; photoinjection; quantum interference; second-harmonic pulses; temperature 300 K; terahertz radiation; Interference; Nonlinear optics; Optical interferometry; Optical pulse generation; Optical pulses; Optical pumping; Pulse amplifiers; Silicon; Stimulated emission; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453178
Filename
4453178
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