Title :
BSIM3v3 based degradation compact model for circuit simulation of non-volatile flash memories
Author :
Schuler, F. ; Kowarik, O. ; Hoffmann, K.
Author_Institution :
Bundeswehr Munich Univ., Neubiberg, Germany
Abstract :
A BSIM3v3.1 based flash memory degradation compact model for circuit simulators has been developed. By a physics based modification of the Fowler-Nordheim equation, the tunnel current can be calculated considering both positive and negative oxide charges. It has been shown that every known endurance characteristic can be simulated by this model. It allows a precise simulation of worst case operation of flash memories and an optimized circuit design
Keywords :
circuit optimisation; circuit simulation; electron traps; flash memories; hole traps; integrated circuit design; integrated circuit modelling; integrated memory circuits; random-access storage; BSIM3v3 based degradation compact model; BSIM3v3.1 based flash memory degradation compact model; circuit simulation; circuit simulators; endurance characteristic simulation; flash memories; negative oxide charges; nonvolatile flash memories; optimized circuit design; physics based Fowler-Nordheim equation modification; positive oxide charges; tunnel current; worst case operation; Character generation; Circuit simulation; Degradation; Design optimization; Electron traps; Equations; Flash memory; Nonvolatile memory; Physics; Voltage;
Conference_Titel :
Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on
Conference_Location :
Bangi
Print_ISBN :
0-7803-4971-7
DOI :
10.1109/SMELEC.1998.781158
