• DocumentCode
    3016071
  • Title

    HDMI transmitter in 32nM technology using 28Å MOS

  • Author

    Gupta, Nitin ; Nandy, Tapas ; Kundu, Somnath

  • Author_Institution
    STMicroelectron. Pvt. Ltd., Noida, India
  • fYear
    2012
  • fDate
    20-23 May 2012
  • Firstpage
    1951
  • Lastpage
    1954
  • Abstract
    The output driver of the HDMI transmitter is designed in 32nM using MOS of 28 Å gate oxide thickness. These MOS transistors are capable of handling 1.8v only. The circuit protects the MOS transistors exposed to 3.3v at the receiver termination, when the transmitter is power on, as well as, when it is power off. The area of the implemented HDMI Transmitter physical layer is 0.283mm2 and power consumption is 12mW @ 2.22Gbps (740Mbps/Channel) as seen on silicon.
  • Keywords
    MOS integrated circuits; MOSFET; driver circuits; transmitters; HDMI transmitter; MOS transistors; bit rate 2.22 Gbit/s; output driver; power 12 mW; power consumption; size 28 angstrom; size 32 nm; voltage 3.3 V; Logic gates; MOSFETs; Physical layer; Receivers; Silicon; Stress; Transmitters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
  • Conference_Location
    Seoul
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4673-0218-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.2012.6271657
  • Filename
    6271657
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3016071