Title :
A new class of integrated CMOS rectifiers with improved PVT-compensated efficiency
Author :
Xu, Hongcheng ; Ortmanns, Maurits
Author_Institution :
Inst. of Microelectron., Univ. of Ulm, Ulm, Germany
Abstract :
We review in this paper a new class of integrated CMOS rectifiers with improved PVT-compensated efficiency and propose also a new voltage quadrupler. By utilizing a threshold compensation technique, the presented circuits are able to achieve both high voltage conversion efficiency (VCE) and power conversion efficiency (PCE) with only standard threshold devices at low input amplitudes. Besides, the performance of the rectifiers is selfcompensated over process and temperature, which is achieved by precisely tracking the diode threshold drift with an auxiliary dummy. The rectifiers are implemented in AMS 0.35μm 4M/2P standard CMOS process and the simulated performance is shown at an input frequency of 13.56MHz. For the proposed voltage quadrupler, at 0.8V input amplitude and 2kΩ load resistor, output voltage of 1.52V can be achieved with VCE and PCE of 48% and 49%, respectively. As compared to previously published results, the improvement is up to 358% in VCE and 351% in PCE. Besides, the maximum deviation in its output voltage is as low as 162mV over 100°C temperature span, which outperforms the conventional structure by almost an order of magnitude.
Keywords :
CMOS integrated circuits; compensation; diodes; power conversion; radiofrequency integrated circuits; rectifiers; AMS 4M-2P standard CMOS process; PCE; VCE; auxiliary dummy; diode threshold drift; efficiency 48 percent; efficiency 49 percent; frequency 13.56 MHz; improved PVT-compensated efficiency; integrated CMOS rectifier; low input amplitude; power conversion efficiency; resistance 2 kohm; resistor; size 0.35 mum; standard threshold device; threshold compensation technique; voltage 0.8 V; voltage 1.52 V; voltage conversion efficiency; voltage quadrupler; CMOS integrated circuits; Capacitors; MOS devices; Resistors; Schottky diodes; Standards; Threshold voltage;
Conference_Titel :
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-0218-0
DOI :
10.1109/ISCAS.2012.6271743