DocumentCode
3017980
Title
Electromigration aware design for nano-packaging
Author
Zhu, Xinen ; Kotadia, H. ; Xu, Songcen ; Lu, Hai-Han ; Mannan, S.H. ; Bailey, Christopher ; Chan, Y.C.
Author_Institution
Univ. of Greenwich, London, UK
fYear
2013
fDate
5-8 Aug. 2013
Firstpage
24
Lastpage
29
Abstract
The physical phenomenon electromigration (EM) and computer simulation methods of EM in microelectronics devices have been reviewed. A multi-physics EM simulation method which can be used to predict voids appearance in conductors has been described and its relevant challenges have been discussed. The optimizing methods for nano-packaging are discussed in this work and shunt structure for solder joint is proposed and been verified to have a significant potential to resist EM by our model.
Keywords
conductors (electric); electromigration; integrated circuit packaging; solders; computer simulation; conductors; electromigration aware design; microelectronics devices; multiphysics EM simulation; nanopackaging; shunt structure; solder joint; voids appearance; Conductors; Current density; Materials; Resistance; Soldering; Stress; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
Conference_Location
Beijing
ISSN
1944-9399
Print_ISBN
978-1-4799-0675-8
Type
conf
DOI
10.1109/NANO.2013.6720970
Filename
6720970
Link To Document