DocumentCode
3018816
Title
Analysis of the Spontaneous Emission Rate Enhancement by Surface Plasmons in a Thin Metallic Layer Embedded in Semiconductor
Author
Iwase, Hideo ; Vuckovic, Jelena
Author_Institution
Canon Inc., Tokyo
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We study the modification of spontaneous emission rates from multi-quantum wells beneath a thin metallic layer embedded in semiconductor.
Keywords
III-V semiconductors; indium compounds; metallic thin films; semiconductor quantum wells; spontaneous emission; surface plasmons; InP; multi-quantum wells; spontaneous emission rate; surface plasmons; thin metallic layer; Absorption; Fabrication; Frequency estimation; Gold; Indium phosphide; Optical devices; Optical surface waves; Plasmons; Refractive index; Spontaneous emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453354
Filename
4453354
Link To Document