Title :
Linear models for temperature and power dependence of thermal resistance in Si, InP and GaAs substrate devices
Author :
Walkey, David J. ; Smy, Tom J. ; MacElwee, T.W. ; Maliepaard, M.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
Abstract :
Integrated high-power circuits are typically formed on Si, InP or GaAs substrates. Linear models are derived for the dependence of thermal resistance on temperature dependent thermal conductivity through backside temperature and self-heating. Applied to InP substrate devices, the model predictions are found to be within 5% of measurements for power levels to 3 mW/μm2 and over a 165°C substrate temperature range
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; integrated circuit measurement; integrated circuit modelling; power integrated circuits; silicon; thermal conductivity; thermal resistance; GaAs; GaAs substrate devices; GaAs substrates; InP; InP substrate devices; InP substrates; Si; Si substrate devices; Si substrates; backside temperature; integrated high-power circuits; linear models; model predictions; power dependence; power levels; self-heating; substrate temperature range; temperature dependence; temperature dependent thermal conductivity; thermal resistance; Electrical resistance measurement; Gallium arsenide; Indium phosphide; Integrated circuit measurements; Power measurement; Predictive models; Temperature dependence; Temperature distribution; Thermal conductivity; Thermal resistance;
Conference_Titel :
Semiconductor Thermal Measurement and Management, 2001. Seventeenth Annual IEEE Symposium
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6649-2
DOI :
10.1109/STHERM.2001.915183
