Linear models for temperature and power dependence of thermal resistance in Si, InP and GaAs substrate devices

Author

Walkey, David J. ; Smy, Tom J. ; MacElwee, T.W. ; Maliepaard, M.

Author_Institution

Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada

fYear

2001

fDate

2001

Firstpage

228

Lastpage

232

Abstract

Integrated high-power circuits are typically formed on Si, InP or GaAs substrates. Linear models are derived for the dependence of thermal resistance on temperature dependent thermal conductivity through backside temperature and self-heating. Applied to InP substrate devices, the model predictions are found to be within 5% of measurements for power levels to 3 mW/μm² and over a 165°C substrate temperature range

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; integrated circuit measurement; integrated circuit modelling; power integrated circuits; silicon; thermal conductivity; thermal resistance; GaAs; GaAs substrate devices; GaAs substrates; InP; InP substrate devices; InP substrates; Si; Si substrate devices; Si substrates; backside temperature; integrated high-power circuits; linear models; model predictions; power dependence; power levels; self-heating; substrate temperature range; temperature dependence; temperature dependent thermal conductivity; thermal resistance; Electrical resistance measurement; Gallium arsenide; Indium phosphide; Integrated circuit measurements; Power measurement; Predictive models; Temperature dependence; Temperature distribution; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Thermal Measurement and Management, 2001. Seventeenth Annual IEEE Symposium

Conference_Location

San Jose, CA

Print_ISBN

0-7803-6649-2

Type

conf

DOI

10.1109/STHERM.2001.915183

Filename

915183