Fabrication of ZnO nanowire device using top-down approach

Author

Sultan, S.M. ; Sun, K. ; Partridge, J. ; Allen, M. ; Ashburn, P. ; Chong, H.M.H.

Author_Institution

Nano Res. Group, Univ. of Southampton, Southampton, UK

fYear

2011

fDate

14-16 March 2011

Firstpage

1

Lastpage

3

Abstract

ZnO nanowire devices were fabricated from top-down using optical lithography. The nanowires are formed from anisotropic etch of 100 nm Filtered Cathodic Vacuum Arc (FCVA) deposited ZnO thin film. The nanowires are characterized using SEM and Raman spectroscopy via image mapping. The current-voltage characteristics showed a typical ohmic behaviour after contact annealing, reflecting the influence of the lowering of contact barriers between the ZnO nanowire device and the Al metal electrode.

Keywords

II-VI semiconductors; Raman spectra; nanoelectronics; nanofabrication; nanowires; photolithography; scanning electron microscopy; semiconductor thin films; vacuum arcs; wide band gap semiconductors; zinc compounds; Al; Al metal electrode; Raman spectroscopy; SEM; ZnO; ZnO nanowire device fabrication; contact annealing; current-voltage characteristics; deposited ZnO thin film; filtered cathodic vacuum arc; image mapping; optical lithography; size 100 nm; top-down approach; Annealing; Fabrication; Nanoscale devices; Raman scattering; Silicon; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on

Conference_Location

Cork

Print_ISBN

978-1-4577-0090-3

Electronic_ISBN

978-1-4577-0089-7

Type

conf

DOI

10.1109/ULIS.2011.5757956

Filename

5757956