Specific features of fluorination of silicon surface region by RIE in r.f. CF4 plasma — novel method of improving electrical properties of thin PECVD silicon dioxide films

Author

Kalisz, Malgorzata ; Mroczynski, Robert ; Beck, Romuald B.

Author_Institution

Inst. of Microelectron. & Optoelectron., Warsaw, Poland

fYear

2011

fDate

14-16 March 2011

Firstpage

1

Lastpage

4

Abstract

In this study, the comparison of methods of improving electro-physical properties of silicon dioxide (SiO₂) by means of silicon substrates fluorination in CF₄ in PECVD and RIE reactors, prior to oxide deposition, has been performed. The results proved that, in general, fluorination in RIE is superior to the fluorination in PECVD reactor. The observed effects have been referred to the obtained changes in the electrical properties, resulting from both fluorination methods. As a result of this study, it has been proved, that properties change is fluorine concentration dependent.

Keywords

MIS structures; dielectric thin films; elemental semiconductors; plasma CVD; silicon; silicon compounds; sputter etching; MOS structure; RIE; Si; SiO₂; electrical properties; electrophysical properties; oxide deposition; plasma CVD; radiofrequency CF₄ plasma; silicon dioxide films; silicon substrate fluorination; silicon surface region; Inductors; Logic gates; Plasma temperature; Silicon; Silicon compounds; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on

Conference_Location

Cork

Print_ISBN

978-1-4577-0090-3

Electronic_ISBN

978-1-4577-0089-7

Type

conf

DOI

10.1109/ULIS.2011.5757960

Filename

5757960