DocumentCode :
3020346
Title :
Models for interconnect capacitance extraction
Author :
Husain, Asim
Author_Institution :
Intel Corp., Santa Clara, CA, USA
fYear :
2001
fDate :
2001
Firstpage :
167
Lastpage :
172
Abstract :
Commonly used numerical methods in capacitance extraction both for small and large circuit blocks are reviewed for a VLSI design. Boundary element based field solvers can effectively be used for small structures but can not be used for large structures because of large grid requirement. Field solvers based on random walk method are more appropriate for large structures but still they are quite slow in comparison to analytic capacitance models, which are generally applied for chip level extractions. Accounting for 3D fringing fields has become essential in analytic models for accurate extraction of current VLSI technologies
Keywords :
VLSI; boundary-elements methods; capacitance; integrated circuit design; integrated circuit interconnections; integrated circuit modelling; 3D fringing field; VLSI design; analytical model; boundary element method; field solver; interconnect capacitance; numerical model; parameter extraction; random walk method; Analytical models; Boundary element methods; Capacitance; Central Processing Unit; Dielectric materials; Finite difference methods; Finite element methods; Integrated circuit interconnections; Libraries; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design, 2001 International Symposium on
Conference_Location :
San Jose, CA
Print_ISBN :
0-7695-1025-6
Type :
conf
DOI :
10.1109/ISQED.2001.915222
Filename :
915222
Link To Document :
بازگشت