Title :
10 Gb/s low-noise transimpedance amplifier for optoelectronic receivers based on InAlAs/InGaAs/InP HEMTs
Author :
Bertenburg, R.M. ; Janssen, G. ; Van Waasen, S. ; Auer, U. ; Reuter, R. ; Fritzsche, D. ; Tegude, F.J.
Author_Institution :
Dept. of Solid State Electron., Gerhard-Mercator-Univ., Duisburg, Germany
Abstract :
A transimpedance amplifier based on 0.7 μm InAlAs/InGaAs/InP HEMTs and applicable for bit rates in the range of 2.5-10 Gb/s has been developed and realized. Compact chip layout guarantees extremely flat gain, linear phase and very small group delay time variations, respectively. Measured transimpedance is ZTO=51.6 dBΩ (f3 dB=8.5 GHz) for the 10 Gb/s version. Mean equivalent input noise current density is ina=7.98 pA/√(Hz) over the bandwidth 0⩽f⩽10 GHz. Calculated receiver sensitivity is ηPmin=-24.1 dBm@10 Gb/s and BER=10-9
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium arsenide; indium compounds; integrated circuit noise; integrated optoelectronics; optical receivers; wideband amplifiers; 0.7 micron; 10 GHz; 2.5 to 10 Gbit/s; 8.5 GHz; HEMTs; InAlAs-InGaAs-InP; LNA; OEIC; compact chip layout; low-noise transimpedance amplifier; optoelectronic receivers; Bit rate; Delay effects; Gain; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; MODFETs; Semiconductor device measurement;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO
Conference_Location :
Leeds
Print_ISBN :
0-7803-3130-3
DOI :
10.1109/EDMO.1996.575800
