Title :
Elastic, piezoelectric and dielectric properties of PIN-PMN-PT crystals grown by Bridgman method
Author :
Luo, Jun ; Hackenberger, Wesley ; Zhang, Shujun ; Shrout, Tom R.
Author_Institution :
TRS Technol., Inc., State College, PA
Abstract :
PIN-PMN-PT (Pb(Infrac12Nbfrac12)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3) single crystals with 26%-59% PIN were successfully grown by Bridgman technique. Elastic, dielectric and piezoelectric properties of ternary PIN-PMN-PT crystals were studied in comparison with PMN-PT (Pb(Mg1/3Nb2/3)O3 - PbTiO3) crystals. It was demonstrated that PIN-PMN-PT crystals possess as excellent piezoelectric properties as PMN-PT crystals, but can be operated at elevated temperature and AC electric field without the depoling issue. TRT of PIN-PMN-PT crystals with 26%-36% PIN were roughly in the range of 115 -135degC, 30-40degC higher than that of PMN-PT crystals; meanwhile, EC were on the order of 4.5-5.6kV/cm, two to three times higher than that of PMN-PT crystals. A full set of measured or derived elastic, piezoelectric and dielectric properties of PIN-PMN-PT crystals are present in this paper.
Keywords :
crystal growth from melt; elasticity; ferroelectric materials; ferroelectricity; indium compounds; lead compounds; magnesium compounds; piezoelectric materials; piezoelectricity; AC electric field; Bridgman method; PMN-PT crystal comparison; Pb(In0.5Nb0.5)O3-PMN-PbTiO3; dielectric properties; elastic properties; piezoelectric properties; temperature 115 C to 135 C; temperature 30 C to 40 C; ternary PIN-PMN-PT crystal growth; Bandwidth; Crystalline materials; Crystallization; Crystals; Dielectric materials; Dielectric measurements; Educational institutions; Electric fields; Sensor arrays; Temperature dependence; PIN-PMN-PT; dielectric property; elastic property; piezoelectric property; single crystal;
Conference_Titel :
Ultrasonics Symposium, 2008. IUS 2008. IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2428-3
Electronic_ISBN :
978-1-4244-2480-1
DOI :
10.1109/ULTSYM.2008.0064
